SOI transistor with pocket implant.

摘要

A silicon-on-insulator MOS transistor (200) is disclosed that has an implanted region (32) of the same conductivity type as the body underneath one or both of the extended drain and source portions (26) of the drain (24) and the source (23) with and without a BTS contact or a general body contact. With only the pocket implants, the back gate threshold voltage is enhanced to reduce the possibility of back gate current flowing. With the pocket implants and a body contact, the floating body effects are minimized. Due to the BTS contact being located as far into the source as the pocket implant extends, negligible impact is made on the device channel. Ohmic connection between the source and the body is made for example by way of silicidation. <IMAGE>