| 摘要 |
PURPOSE:To obtain a semiconductor storage device and its manufacturing method wherein a conventional high capacitance value is ensured while high level of integration is ensured. CONSTITUTION:Each of the capacitor regions of two adjacent memory cells A, B mutually contains the other memory cell region, has the wide electrode surface of each of the storage electrodes A', B' in the direction vertical to the substrate surface, and surrounds the periphery of two adjacent memory cell regions. Hence, in the case of the same plane size as the conventional memory cell, a large capacitor region can be obtained, and the level of integration is increased, because a capacitor area is proportional to the peripheral length of a storage electrode. Thereby a semiconductor storage device capable of ensuring a large capacitance value in spite of a small memory cell area can be obtained. |
