| 摘要 |
PURPOSE:To realize a semiconductor light-emitting device capable of giving out the emission of light of a high efficiency even in short-wavelength regions, such as yellow, green short-wavelength regions and the like, by a method wherein the carrier concentration and film thickness of an active layer are optimized. CONSTITUTION:In a semiconductor light-emitting device of a structure, in which a double heterostructure part constituted in such a way as to hold an active layer 13 consisting of an InGaAlP material between n-type and p-type clad layers 12 and 14 is formed on an n-type GaAs substrate 11, a first electrode 17 is formed at one part on this double heterostructure part, a second electrode 18 is formed on the surface on the opposite side to the structure part of the substrate 11 and light is led out through the upper part of the surface other than the electrode 17 formed at one part on the luminous surface on the opposite side to the surface on the side of the electrode 18 of the substrate 11, the carrier concentration of the layer 13 is set into a p-type carrier concentration of 1X10<17>cm<-3> or lower or an n-type carrier concentration of 5X10<16>cm<-3> or lower and the thickness of the layer 13 is set in the range of a thickness of 0.15 to 0.75mum. |
