发明名称 |
Process for producing a stacked capacitor of a dram cell |
摘要 |
A stacked capacitor of the fin-like structure is provided wherein the plurality of polysilicon layers constituting the storage electrode are connected with each other in the sawtooth-like manner to overcome the structural instability of the fin-like structure. The polysilicon layers constituting the storage electrode are extended overlaying each other, so that the capacity of the capacitor in a highly integrated DRAM may be increased without increasing the area occupied by the capacitor.
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申请公布号 |
US5135883(A) |
申请公布日期 |
1992.08.04 |
申请号 |
US19900582380 |
申请日期 |
1990.09.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAE, DONG-JOO;CHIO, KYU-HYUN;BAEK, WON-SHIK |
分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L27/10;H01L27/108 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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