| 摘要 |
The present invention is a semiconductor laser having an integral photodiode and/or modulator. The integrated structure comprises a quantum well active region sandwiched between a pair of distributed Bragg reflector stacks for emitting laser light transverse to the planes of growth. An intrinsic layer and a doped semiconductor layer are disposed on one of the reflector stacks for forming, in combination with the outer layer of the stack, a photodiode in the path of emitted light. The diode can be used either to monitor the laser power or to modulate the laser output. The device is particularly suited for fabrication and testing in large arrays and, in addition, has the advantages of a circular, low divergence optical output, inherently single mode operation, and a high two-dimensional packing density.
|
