发明名称 |
Interconnecting layer on a semiconductor substrate |
摘要 |
A semiconductor arrangement includes a substrate having a plurality of transistors formed therein and a tungsten layer thereon in the form of elongate tracks serving to interconnect the transistors. Localized regions of highly doped semiconductor material underlie the tracks and form an ohmic contact therewith. The tungsten layer is overlaid with an electrically insulating oxide on which further electrical interconnections are present. |
申请公布号 |
US5136355(A) |
申请公布日期 |
1992.08.04 |
申请号 |
US19910665290 |
申请日期 |
1991.03.06 |
申请人 |
MARCONI ELECTRONIC DEVICES LIMITED |
发明人 |
KERR, JOHN A.;DEVINY, IAN F. |
分类号 |
H01L23/528;H01L23/532 |
主分类号 |
H01L23/528 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|