| 摘要 |
PURPOSE:To improve throughput by shortening the time necessary for correction irradiation in a ghost method. CONSTITUTION:In an electron beam lithography method containing a correction irradiation process using a ghost method, the whole correction region is divided into small regions larger than the minimum figure which is smaller than the stretch of backward scattering of an electron beam and available for image sensing. As a unit figure to be projected on each of the small regions, representative unit figures whose number is smaller than the number of times of projection when a pattern, wherein a desired pattern in said small region is white-black- inverted, is subjected to image sensing are set. The irradiation dose is set for each representative unit figure in each small region. The beam size is defocused up to the degree of stretch of backward scattering. The representative unit figure in each small region is image-sensed by the above set irradiation dose.
|
