发明名称 |
Field effect device with polycrystalline silicon channel |
摘要 |
A CMOS SRAM cell has a polycrystalline silicon signal line between a common node, which is the data storage node, and the power supply. A field effect device is fabricated within this polycrystalline silicon signal line. The channel of the field effect device is separated from an active area in the substrate by a thin gate dielectric, and the active region within the substrate functions as the control gate for the field effect device. Such a device can be used to provide polycrystalline silicon P-channel transistors for use in CMOS SPRAM cells.
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申请公布号 |
US5135888(A) |
申请公布日期 |
1992.08.04 |
申请号 |
US19900531014 |
申请日期 |
1990.05.31 |
申请人 |
SGS-THOMSON MICROELECTRONICS, INC. |
发明人 |
CHAN, TSIU C.;HAN, YU-PIN;GURITZ, ELMER H. |
分类号 |
H01L21/8238;H01L21/02;H01L21/8244;H01L27/06;H01L27/092;H01L27/11 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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