| 摘要 |
<p>PURPOSE:To improve the yield, quality and reliability of an active-matrix liq. crystal display by lowering a leakage current generated between the source electrode and drain electrode of a thin-film transistor element to be used for the display. CONSTITUTION:A source electrode 12, a drain electrode 13, a contact layer 14, an operating semiconductor layer 15, a gate insulating layer 16 and a gate electrode 17 are laminated on a matrix as shown in the figure to produce a thin-film transistor matrix of top gate stagger type. In this case, the source and drain electrodes 12 and 13 are firstly formed on the matrix in a specified pattern, the layer 4 of the impurities consisting of a group V element is deposited on the electrodes, then a P-type semiconductor layer contg. a group III element is deposited to form the contact layer, and the operating semiconductor layer is formed.</p> |
