| 摘要 |
A multi-layered wiring structure includes a plurality of signal lines formed in a common layer and a shield line provided between any two of the lines in a separate layer, with an insulation layer being interposed, for absorbing electrical effects that will occur between the two signal lines. Also, a multi-layered wiring structure includes a plurality of thin-film transistors formed in a common layer and a shield line provided between the source electrode of one such thin-film transistor and the drain electrode of an adjacent thin-film transistor in a separate layer, with an insulation layer being interposed, for absorbing electrical effects that will occur between the source electrode of the one thin-film transistor and the drain electrode of the adjacent thin-film transistor. |
