SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

PURPOSE:To enable a semiconductor light-emitting element to be lessened in heat release value and enhanced in luminous efficiency by a method wherein the light emitting element is lessened in drive voltage and electrical resistance. CONSTITUTION:An InGaAlN conductor heat releasing layer, a high resistance InGaN layer 12 (either provided or not provided), and metal films 14 and 15 are formed on a conductive ZnO substrate. A layer 13 denotes a current constriction layer, and figures 16 and 7 represent electrodes respectively.