| 摘要 |
PURPOSE:To enhance the element isolating action of an isolation diffused layer of a semiconductor device by forming a P type diffused layer having diffusing width wider than the isolation diffused layer and diffusion depth shallower than that on the upper surface of the isolation diffused layer. CONSTITUTION:An N type conductive layer 11 is laminated on the surface of a P type semiconductor substrate 10. A gate diffused layer 12 extended internally from the surface of an N type conductive layer 11 is formed on the layer 11, and an isolation diffused layer 13 extended to the P type semiconductor substrate 10 is formed from the surface of the layer 11 at a predetermined interval from the layer 12. Then, a P type diffused layer 14 having a diffusing width wider than the layer 13 and diffusion depth shallower than that including the upper surface of the layer 13 is formed on the layer 11. Further, an insulating layer 19 and a silicon layer 15 are formed thereon, and electrodes 16, 17, 21 are led therefrom. Thus, it can prevent the decrease in the surface density of the isolation diffused layer and enhance the element isolating action. |
