PRODUCTION OF ELECTRODE WIRING OF MULTIPLAYERED METAL FILM

摘要

PURPOSE:To prevent the occurrence of trouble such as a leakage current of a thin film transistor by removing the overhang of the upper metal layer of a gate electrode made of a multilayered metal film by re-etching. CONSTITUTION:The overhang of the upper metal layer 120b of a multilayered metal film circuit 12 formed at the time of etching the lower metal layer 120a is removed by re-etching and the sides of the upper and lower metal layers are aligned. Since bubbles are not confined, a film formed later such as a gate insulating film formed by plasma CVD or an operative semiconductive layer is made free from abnormality and the occurrence of trouble such as a leakage current of a thin film transistor can be prevented.