| 摘要 |
PURPOSE:To make a necessary treatment without heating in a furnace to avoid contamination or damage of semiconductor substrates. CONSTITUTION:A burning flame of the mixture gas of hydrogen and oxygen is applied to the surface of a semiconductor substrate to heat only the substrate surface. Varying the ratio of hydrogen and oxygen allows treatment of oxidativeness or reductiveness. An apparatus to realize this method comprised a first duct (6) which leads hydrogen, a second duct (7) which leads oxygen, a flame generating means (5) which burns hydrogen and oxygen under a mixture state over a range wider than the diameter of an untreated semiconductor substrate (1) and generates downward flames, flow adjusting means (8), (9) installed halfway on the first and second ducts to the flow rate of the gas passing through each, and transfer means (2), (3), (14) installed below the flame generating means to transfer untreated semiconductor substrates. |
