发明名称 ZNO THINNFILM ELASTIC SURFACE WAVE ELEMENT
摘要 PURPOSE:To decrease the frequency-temperature coefficient, by selecting the material of the glass substrate. CONSTITUTION:The inter-digital electrode 2 is provided on the glass substrate 1 via an Al thin film, and the ZnO thin film 3 is stuck on the electrode 2 by the sputtering method. Then the counted electrode 4 is formed on the film 3 via the Al film to obtain a ZnO thin-film elastic surface wave element. The substrate 1 uses mainly SiO2 having a component ratio within a range of 0.05<=X/Y<=0.32, where X is the total of mol% of one or plural kinds among Li2O, Na2O, K2O, MgO, CaO and BaO and Y is the total of mol% of one or plural kinds among B2O3, Al2O3, SiO2, ZnO, PbO and TiO2. With use of a glass substrate of such composition, the frequency-temperature coefficient of the elastic surface wave can be set within a range from -30ppm/ deg.C to +30ppm/ deg.C.
申请公布号 JPS56122218(A) 申请公布日期 1981.09.25
申请号 JP19800025135 申请日期 1980.02.29
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 MASHITA MASAO
分类号 H03H9/145;H03H3/08 主分类号 H03H9/145
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