SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To increase the capacitor area of a semiconductor device by using a structure in which capacitor means for storing signal charge is laid over a conductive film formed between signal lines and a semiconductor substrate. CONSTITUTION:A capacitor 20a includes an upper electrode 15 composed of a conductive material such as polycrystalline silicon that is formed on a dielectric film 14. Bit lines 18 are formed on an insulating film 16 are connected through a conductive film 10 to source/drain regions 6c and 9c of an access transistor 19a. Capacitors 20a and 20b are laid over the conductive film 10. Therefore, the capacitor area can be increased without an increase in surface area of a cell.