| 摘要 |
PURPOSE:To obtain a positive type resist material which possesses the high transmissivity for the far infrared light and KrF excimer laser beam, the superior sensitivity for light exposure, heat resistance, and the close adhesion performance with a substrate. CONSTITUTION:A chemical amplification type resist material contains the polymer shown by the formula, photosensitive compound which generates acids through light exposure, and a solvent which dissolves the above-described chemicals. In the formula, R<1> is a methyl group, isopropyl group, tert-butyl group, tetrahydropyranyl group, trimethyl silyl group or tert-butoxy carbonyl group, and each of (k) and (l) is a natural number (k/(k+l)=0.1-0.9). As the polymer, is listed p-tert-butoxystyrene-p-hydroxystyrene polymer, and as the acid generating agent, is listed bis(p-toluene sulfonyl) diazomethane. Further, as the solvent, is listed methyl cellosolve acetate. |
