| 摘要 |
PURPOSE: To improve receiver sensitivity, to attain a high speed operation, to improve reliability, and to simplify a packaging process. CONSTITUTION: A channel layer 22 and an undoped light absorbing layer 24 are successively grown on a semi-insulating InP substrate 21, and the anisotropic selection etching of only the light absorbing layer 24 is operated, an etching mask is removed, a clad layer 25 is grown, a P-type metal 26 is deposited, and annealing is operated. Afterwards, the selection etching of only the gate area of an FET is operated, the selection etching of only the light absorbing layer exposed on the surface is operated, an (n) type metal 27 is deposited, the coating of polyimide 28 is operated, the etching of a wire contact part between the light absorbing part and the element is operated, and a secondary wire metal is deposited.
|
