| 摘要 |
PURPOSE: To provide a method for protecting an overvoltage by internally limiting currents in a semiconductor device 10. CONSTITUTION: A semiconductor device 10 is provided with at least a first junction 40 having a prescribed impurity concentration at the both sides of the junction, and the pertinent first junction is provided so as to be separated from a second junction 42 or a current interrupting means. When a prescribed voltage is impressed to this device, a depletion area 44 from the above mentioned first junction is brought into contact with the depletion area 44 from the above-mentioned second junction or the current interrupting means, and currents are pinched off in a desired voltage. The above-mentioned pinch-off voltage can be changed according to the adjustment of a distance between the above-mentioned first junction and the above-mentioned second junction or a distance between the above-mentioned first junction and the above- mentioned current interrupting means, and the adjustment of the impurity concentration.
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