| 摘要 |
The bipolar pinch resistor device for using in a bipolar linear IC regardless of the polarity of the applied potential comprises forming P type base layers (15,15') into an n type epitaxial layer (4), forming N+ type emitter layers (16,16') in the base layers (15,15') and connecting the one side of the base layers (15,15') respectively to the emitter layers (16,16') by using Al electrodes (17,18,17',18',19,19') and an Al wiring (21).
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