METHOD OF MANUFACTURING SILICON OXY NITRIDE THIN FILM

摘要

The method for producing silicon oxynitride film is characterized by installing a silicon nitride (Si3N4) target attached to the negative electrod and a glass substrate attached to the positive electrode in the vacuum container, pouring Ar and O2 gas into the container, and colliding a cation of the Ar gas to the target and then reacting a Si and N particle with a reactive O2 gas to form a Si-N-O particle film on the substrate. The produced film has a good adhesiveness, and is used as an insulating, dielectric and protecting film of semiconductor and photoelectron devices.