| 摘要 |
This pressure transducer is a monolithic transducer comprising at least two semiconductor layers (8, 12) made from III-V materials sensitive to pressure and to temperature, a first layer (8) doped by donor-type impurities, to a first concentration, and having a first resistivity which is a function of the pressure and of the temperature, and a second layer (12) doped by donor-type impurities, to a second concentration different from the first concentration, having a second resistivity whose temperature dependence is different from that of the first resistivity and is a function of the pressure and of the temperature, these two layers being supported by the same substrate made from III-V material. …<IMAGE>… |
