发明名称 HALBLEITERVORRICHTUNG
摘要 <p>A first insulating layer (32), a first shield pattern (iii) and a second insulating layer (112) are layered on an aluminum substrate (31) in that order. A first and a second power switching element (1, 2), which are in totem pole like connection, are provided On the second insulating layer (112). Also provided on the second insulating layer (112) are a first and a second control circuit (13, 14), through a second and a third shield pattern (101, 104) as well as a third and a fourth insulating layer (105, 106). The first shield pattern (111) is kept at a certain reference potential, because +-he first shield pattern (11) connected to a power source terminal N. The second and the third shield pattern (101, 104) are kept at potentials corresponding to the potentials of the output terminals of the first and the second power switching element (1, 2), respectively.</p>
申请公布号 DE4124757(A1) 申请公布日期 1992.07.30
申请号 DE19914124757 申请日期 1991.07.25
申请人 MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP 发明人 FUKUNAGA, MASANORI, FUKUOKA, JP
分类号 H01L23/14;H01L23/538;H01L25/16 主分类号 H01L23/14
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