| 摘要 |
PURPOSE:To reduce an etchant component adhering and remaining on a solder bump by etching a barrier metallic layer by conducting a reflow process before etching. CONSTITUTION:Cr is precipitated on a passivation film 3 and in an opening section 4 as a barrier metallic layer 5 through sputtering, and Cu is precipitated on the barrier metallic layer 5 to form a buffer layer 6. An Sn-Pb group solder bump 7' in size covering the opening section 4 is formed onto the buffer layer 6 through a photolithographic process and plating, and the buffer layer 6 is etched while using the solder bump 7' as a mask. Accordingly, an etchant component adhering and remaining on the solder bump can be reduced by etching the barrier metallic layer. |
