| 摘要 |
PURPOSE:To enlarge a contact area at contact parts and to reduce a contact resistance by a method wherein a recessed part or a removed part is formed inside a contact part at a lower-side metal interconnection and a contact part at an upper-side metal interconnection is arranged at its inside. CONSTITUTION:A lower-side metal interconnection and an upper-side metal interconnection 2, 4 are formed so as to be provided with contact parts 2a, 4a which are continuity-connected to each other through a contact hole 5 formed in an insulating film 3 with which a semiconductor substrate 1 is covered. At the inside of the part 2a in the interconnection 2 arranged directly under the hole 5, a recessed part 10 which has been passed down to the surface of the substrate 1 is formed so as to be dug along its thickness direction. At the inside of the part 10 formed in the part 2a, the part 4a in the interconnection 4 is arranged in a creeping state. When a removed part formed by removing or cutting the part 10 or the part 2a is formed, the whole surface area of the part 2a in the interconnection 2, i.e., the contact area coming into contact with the part 4a in the interconnection 4, is enlarged, and a contact resistance can be reduced sharply. |
