| 摘要 |
PURPOSE:To obtain a hetero junction diode having a low dark current and high performance by forming the diode of a gallium arsenide crystalline substrate, and an amorphous semiconductor film formed on the substrate. CONSTITUTION:An amorphous silicon carbide film is formed as an amorphous semiconductor film 2 for forming a hetero junction on the entire upper surface of a gallium arsenide crystalline substrate 1 having 10<8>OMEGA.cm of InCr-doped specific resistance and no dislocation by a parallel flat plate type plasma CVD device. Since a hetero junction diode is formed of a hetero junction composed of the substrate 1 and the film 2 formed on the substrate, the film 2 is uniformly formed on the substrate, the film can be deposited without generating a defect in the substrate. Thus, the diode having a low dark current can be stably manufactured by a mass production.
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