| 摘要 |
<p>PURPOSE:To increase a storage capacity with the same occupied area by transmitting the storage information of a memory cell decided in accordance with whether plural data are connected to one of the reference potential transmission lines through a corresponding transistor element. CONSTITUTION:The memory cell 20 is provided with plural memory cell transistors(Trs) 1a, 1b arranged corresponding to word lines 2a, 2b. Sources of these Trs 1a, 1b are connected to a common node NA, then bit lines 3a, 3b arranged corresponding to the Trs 1a, 1b, the node NA, and the reference potential transmission lines 4, 5a, 5b are included therein. In this case, the storage information of cell 20 is decided by the connecting state of the node NA and any one of the transmission lines 4, 5a, 5b. The word lines 2a, 2b are selected respectively by a decoder, and the bit lines 3a, 3b are connected to an output circuit. Then, the different cell 20 can be simultaneously accessed with the cell 20 at one memory cycle in such a manner that the potentials of transmission lines 5a, 5b are changed over, and the semiconductor storage device having large storage capacity with small occupied area is obtained.</p> |
