Self adjusting contact windows in MOS technology - obtd. by selective etching of the silicon dioxide layer down to the silicon nitride stop layer by reactive ion beam with pure tri:fluoro methane

摘要

Process for prodn. of self-adjusting contact windows in MOS technology consisting of dry etching the corresponding layers and applying the contact material, whereby structuring of the SiO2 layer is carried out by means of reactive ion beam etching (RIBE) with pure CHF3 in the energy range of 500 eV to 800 eV and a CHF3 flux of greater than 5 sccm. USE/ADVANTAGE - The process allows selective etching of the SiO2 insulator layer down to the Si3N4 stop layer during the prodn. of contact windows in high density integrated circuits, without using a wet etching stage and without the need to introduce additional polysilicon interlayers as in previous processes