Charge coupled device.

摘要

The present invention is to provide a CCD delay line in which a deterioration of a charge transfer efficiency can be reduced by maintaining a charge amount treated in a charge transfer section (3K) provided at the rear stage of an intermediate output section (7). According to an aspect of the present invention, in a charge transfer devce having charge transfer sections of a plurality of stages consisting of electrode pairs of a transfer gate electrode (5) and a storage gate electrode (4) and at least one intermediate output section provided at the rear stage of a charge transfer section of a predetermined stage (3K-1) from the signal input side, a cross-sectional area of at least one of the transfer gate electrode and the storage gate electrode in the charge transfer section provided at the rear stage of the intermediate output section is selected to be larger (LTa) than that (LTb) in the charge transfer section provided at the front stage of the intermediate output section. Further, the impurity concentration in the region of a semiconductor substrate corresponding to the transfer gate electrode (5) in the charge transfer section (3K) provided at the rear stage of the intermediate output section (7) is selected to be lower than that in the charge transfer section provided at the front stage of the intermediate output section, thereby the potential barrier being increased. <IMAGE>