| 摘要 |
<p>A structure of a ferroelectric capacitor (C) is provided on a source region (24) between a gate electrode (23) and a local oxide film (26). The capacitor (C) has a ferroelectric film (29) sandwiched between an upper electrode (32) and a lower electrode (28), and a film (31) for preventing oxygen from diffusing between the lower electrode (28) and a first interlayer insulating film (30). The film (31) is made of SiN or SiON. Even if for the purpose of transforming the crystallinity of the ferroelectric film (29) it is subjected to an oxygen annealing treatment, oxygen is blocked by the film (31). Therefore, the variation of the threshold voltage and the increase of the leakage current of a transistor scarcely occur. Thereby, the degree of freedom of setting the condition of forming ferroelectric film increases, and a ferroelectric memory of high performance and of large scale integration can be formed.</p> |
