| 摘要 |
PURPOSE:To reduce the level difference between both wirings by installing an intermediate wiring body when making contact between a polysilicon lower wiring layer and an upper aluminum wiring layer. CONSTITUTION:A polysilicon wiring 1 is formed on an insulation film. Then, a first interlayer film 6 is adapted to grow where a contact hole 4 is bored on a spot which serves as an intermediate station for the polysilicon wiring 1 and a tungsten silicide wiring on the lower interlayer layer 6, thereby forming an intermediate stage wiring body 2 and a different tungsten silicide wiring. They are arranged to grow on an upper interlaminar film 7 and the tungsten silicide film, then a contact hole 5 for the tungsten silicide intermediate stage 2 and an aluminum wiring section is bored. Finally, an aluminum wiring 3 is formed on the upper imterlaminar film 7. It is, therefore, possible to reduce the level difference between both the wirings and form contact ease by installing the intermediate stage wiring body 2 in this manner. |
