| 摘要 |
A MOSFET having a back-side source contact and top-side gate and drain contacts is provided by a structure comprising superposed N+, N-, P-, N+ regions arranged between top and bottom surfaces of the semiconductor die. In a preferred implementation, two trenches are etched from the top surface to the P-, N+ interface. A buried P-, N+ short is provided in one trench and a gate dielectric and gate electrode are provided over the sidewall P- region exposed in the other trench. This creates a vertical MOSFET in which the N+ substrate forms the source region shorted to the P- body region in which the channel is created by the gate. Superior performance is obtained in RF grounded-source circuit applications.
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