发明名称 Multichip module having integral decoupling capacitor
摘要 An integral decoupling capacitor for a multichip module. The capacitor is formed over a support base material which need not be conductive. A first plate is formed by deposition of an anodizable metal. The metal is then anodized to form a dielectric layer. A second layer of metal is then formed over the dielectric layer. The formation of the capacitor over the surface of the wafer allows modules to be inventoried. Direct contact to the metal forming the capacitor plates relieves the support base from any requirement to be conductive.
申请公布号 US5134539(A) 申请公布日期 1992.07.28
申请号 US19900630469 申请日期 1990.12.17
申请人 NCHIP, INC. 发明人 TUCKERMAN, DAVID B.;MHASKAR, PANDHARINATH A.
分类号 H01L23/64;H05K1/16 主分类号 H01L23/64
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