Semiconductor device having a buffer structure for eliminating defects from a semiconductor layer grown thereon

摘要

A semiconductor service having a group III-V compound semiconductor layer formed on a buffer structure for intercepting propagation of defects, in which the buffer structure comprises a first material layer of a group III-V compound semiconductor material, a second material layer of a group III-V compound semiconductor material provided on the first material layer, the second material layer containing a first group III element and a second group III element different from the first group III element with a graded compositional profile in which the content of the second group III element is decreased towards an upper boundary and a lower boundary of the second material layer.