| 摘要 |
<p>PURPOSE:To facilitate the alignment of silicon wafers with high precision by a method wherein silicon wafers are anisotropically etched away to make through holes so as to make alignment with the positions of the silicon wafers making reference to the through holes. CONSTITUTION:Windows 12, 13 are made in silicon oxide films 11. Firstly, silicon is etched away from the surface side window 12 out of these windows 12, 13 as etching windows so as to make a recession 14 on the surface of a wafer 1. Furthermore, the silicon on the window 13 parts is anisotropically etched away from the wafer 1 side using KOH, EPW or hydrazine as an etchant so as to make through holes 15. Next, the silicon oxide films 11 are removed so that the silicon wafer 1 to be a base having the recession 14 and the through holes 15 may be formed. Through these procedures, another silicon wafer 2 to be an element is held by the other two silicon wafers 1, 3 to be the bases so as to be sealed up. In such a constitution, in order to laminate the three silicon wafers 1, 2, 3 with on another to be junctioned, the through holes 15, 35 and a P layer 25 are aligned with one another to make alignment with these elements.</p> |
