| 摘要 |
PURPOSE:To prevent deterioration and irregularity of electric characteristics of an element, by forming a second side wall composed of polycrystalline silicon, on a side wall sidewall of an MOSFET having a silicide structure. CONSTITUTION:A first side wall 11 is formed by anisotropically etching a silicon oxide film deposited by a low pressure CVD method, with a reactive ion etching system using plasma of Freon and oxygen. In order to prevent the region, in which a silicon substrate is exposed by anisotropic etching using an RIE equipment when a second side wall composed of polycrystalline silicon film is formed, from being over-etched, a silicon oxide layer 2 is formed on the whole surface of the silicon substrate by a CVD method. After that, a polycrystalline silicon layer is deposited on the whole surface, and a second side wall 12 composed of silicon is formed on the first side wall sidewall by RIE. A source.drain region 6 is formed by ion implantation. A titanium layer 8 is deposited by a DC magnetron sputtering method. |
