发明名称 INSPECTING METHOD OF ACTIVE MATRIX SUBSTRATE
摘要 <p>PURPOSE:To efficiently detect the short circuit and a leakage faulty occurred between a source electrode and a drain electrode by conducting a continuity test with a pulse wave voltage energized a charge storage capacity connected between a gate line or a common terminal and a picture element electrode. CONSTITUTION:Each source line 2 is kept at a high impedance state and a pulse voltage is successively applied on many numbers of gate lines 1 and the voltage wave forms generated on the source line 2 are observed with an oscilloscope 9. When a pulse voltage is applied on the optional n th column of the gate line, TFT connected with n+1 th (a next column) column gate line with the gate electrode is conducted a continuity test. Hence those TFTs are all OFF and when there is a leakage place 8 due to a short circuit, etc., a pulse voltage appears on a source line of TFT from the n th column of gate line chiefly through the charge storage capacity 5 and the pulse voltage wave forms are observed with the oscilloscope 9. Hence the short circuit and the leakage faulty between the source electrode and the drain electrode can be efficiently inspected in each substrate.</p>
申请公布号 JPH04204829(A) 申请公布日期 1992.07.27
申请号 JP19900338120 申请日期 1990.11.30
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KAWASHIMA HIDEYA;ISHIHARA TOMOAKI
分类号 G01R31/02;G02F1/133;G02F1/136;G02F1/1368;G09G3/36 主分类号 G01R31/02
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