| 发明名称 |
MAKING METHOD FOR SEMICONDUCTOR DEVICE |
| 摘要 |
<p>The method for producing a semiconductor is characterized by (a) etching a bonding pad to remove a photosensitive film, (b) treating the etched pad with an acid contg. sulfide compound i.e. NH2HSO3 to remove an aluminium oxide (Al2O3) film and a carbon compound, and (c) annealing the treated pad under the mixed gas (N2/H2) atmosphere at 400-450 deg.C to remove an oxygen. The method gives a high workability in the wire bonding process.</p> |
| 申请公布号 |
KR920006094(B1) |
申请公布日期 |
1992.07.27 |
| 申请号 |
KR19850008911 |
申请日期 |
1985.11.28 |
| 申请人 |
GOLDSTAR ELECTRON CO., LTD. |
发明人 |
AN, DONG - JUN |
| 分类号 |
H01L21/60;(IPC1-7):H01L21/60 |
主分类号 |
H01L21/60 |
| 代理机构 |
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代理人 |
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