Integrated circuits modification with focused ion beam system.

摘要

Apparatus is provided which includes a FIB column having a vacuum chamber for receiving an IC, means for applying a FIB to the IC, means for detecting secondary charged particles emitted as the FIB is applied to the IC, and means for electrically stimulating the IC as the FIB is applied to the IC. The apparatus may be used, for example, (1) to locate a conductor (1610) buried under dielectric material (1615) within the IC, (2) for determining milling end-point when using the FIB (1620) to expose a buried conductor of the IC, and (3) to verify the repair of an IC step-by-step as the repair is made. <IMAGE> <IMAGE>