| 摘要 |
<p>PURPOSE:To enable the effective decomposition of exhaust gas of large flow rate and high concentration by installing a plasma type exhaust gas treating device on the exhaust side of an exhauster appropriately used for a semiconductor manufacturing process and then linking to an exclusive exhauster. CONSTITUTION:On the exhaust side of an exhauster 2 used for a semiconductor manufacturing process 1, a plasma type exhaust treating device 3 is installed. Further, the device is then linked to an exclusive exhauster 4. As a result, a large flow rate of exhaust gas of high concentration can be decomposed effectively and the semiconductor manufacturing process is not affected at all.</p> |
