发明名称 |
Optimization of BV and RDS-on by graded doping in LDD and other high voltage ICs |
摘要 |
Transistor structure using a lightly doped drain (LDD) technique are disclosed. The present invention provides a reduced on-resistance in the LDD region, while retaining substantially all the high breakdown voltage advantage of the LDD technique. The advantage of the present invention is achieved by applying a non-uniform impurity design in the LDD region, increasing gradually from the gate-edge towards the contact.
|
申请公布号 |
US5132753(A) |
申请公布日期 |
1992.07.21 |
申请号 |
US19900498170 |
申请日期 |
1990.03.23 |
申请人 |
SILICONIX INCORPORATED |
发明人 |
CHANG, MIKE F.;OWYANG, KING |
分类号 |
H01L21/336;H01L21/266;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|