| 摘要 |
PURPOSE:To provide a very small title device without requiring position adjustment between an electron beam and a diffraction grating by accelerating electrons in a varistic manner by an electrode formed on a semiconductor and forcing those electrons to pass through the vicinity of the diffraction grating formed on part in the semiconductor. CONSTITUTION:A GaAs epitaxial layer 22 and an AlxGa1-xAs epitaxial layer 24 are provided on a semiinsulating GaAs substrate 21, and a high mobility electron channel 23 comprising two-dimensional electron gas is formed on a hetero interface between the GaAs epitaxial layer 22 and the AlxGa1-xAs epitaxial layer 24 there are provided a diffraction grating 26 and electrodes 25a, 25b for accelerating the electrons in a path 23 in the vicinity of the path 23 of the electrons. Hereby, there can be formed a light emitting device based upon the Smith-Purcell effect can be formed in a semiconductor device integral therewith, and hence there is ensured a very small variable wavelength light source without any adjustment. |
