SEMICONDUCTOR DEVICE INCLUDING INTERLAYER INSULATING FILM

摘要

The method of forming an interlayer insulating film insulating first and second layers of conductor patterns in a semiconductor device includes the steps of preparing a reaction gas including at least ozone and silicon alkoxide, wherein the ratio of ozone with respect to silicon alkoxide is adjusted to be not less than 5 within the reaction gas, and forming an insulating film by CVD reacting the reaction gas at atmospheric pressure at the temperature of 350 DEG C.-450 DEG C., whereupon the interlayer insulating film includes at least the insulating film formed by atmospheric pressure CVD reaction.