| 摘要 |
PURPOSE:To diffuse n-type impurities into a III-V compound semiconductor easily with good controllability by forming an amorphous polycrystalline selenium film or sulfur film on the III-V compound semiconductor. CONSTITUTION:An amorphous or polycrystalline selenium film 5 is placed on a III-V compound semiconductor 1, while a protective film 3 is placed over an entire wafer surface. Its diffusion comprises a process where the amorphous or polycrystalline selenium film 5 or a sulfur film is formed on the III-V compound semiconductor 1 and a process where selenium or sulfur is diffused as n-type impurities in the III-V compound semiconductor from the amorphous or polycrystalline film by means of annealing. That is, amorphous or polycrystalline selenium or sulfur being a VI element is used as a solid phase diffusion source of n-type impurities of the III-V compound semiconductor. Thus highly concentrated n-type impurities can be diffused easily.
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