发明名称 SYSTEM FOR CONTROLLING RESETTING OF MEMORY
摘要 <p>PURPOSE:To prevent the content of a DRAM from being destroyed when a reset signal is inputted by logically disconnecting an access device section from DRAM access when the reset signal is asynchronously inputted to the access device section and the access device section is forcibly terminated. CONSTITUTION:An access device section 2 is connected with a DRAM access controller section 3 through a common bus 6 and the section 3 is connected with a DRAM section 4 through a bus 5. In case the DRAM access strobe line from the section 2 and DRAM address strobe line from the section 3 are turned on when a reset signal is inputted, the DRAM access strobe line is logically disconnected from the section 3 and the normal cycle is executed by using the DRAM address strobe line only. Therefore, the content of a DRAM can be prevented from being destroyed when a reset signal is inputted.</p>
申请公布号 JPH04199208(A) 申请公布日期 1992.07.20
申请号 JP19900317818 申请日期 1990.11.26
申请人 HITACHI LTD;HITACHI COMPUTER ELECTRON CO LTD 发明人 SHINDO TAKASHI;YONEDA ISAO;ABE HIROSHI;OGAWARA TOSHIO
分类号 G06F1/24 主分类号 G06F1/24
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