| 摘要 |
PURPOSE:To enable a resistance of a resistance element to be adjusted after completion by extending a bit line while going around the resistance element. CONSTITUTION:A word line 23 and a ground line 21 are formed by a first-layer conductive layer on a semiconductor substrate, a wiring layer connecting a source/drain region of transistors for transfer 16 and 17 and bit lines 24 and 25 is formed by a second-layer conductive layer on the semiconductor substrate, and resistance elements 14 and 15 are formed by a third-layer conductive layer on the semiconductor substrate. Then, the bit lines 24 and 25 are formed by a fourth-layer conductive layer on the semiconductor substrate so that they are extended going around the resistance elements 14 and 15. Therefore, impurities are ion-implanted to the resistance elements 14 and 15 through a passivation film, etc., after completion, thus enabling the resistance value of these resistance elements 14 and 15 to be adjusted. |
