发明名称 COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURE THEREOF
摘要 PURPOSE:To enable crystallizability of a light-emitting layer to be improved by providing a buffer layer between a substrate and the light-emitting layer. CONSTITUTION:A light-emitting layer which is formed by a laminated film of a nitride semiconductor is formed by a combination of a mixed crystal of a nitride of metal element aluminum Al and indium In, or a nitride of gallium Ga, or a nitride semiconductor layer of the nitride and a mixed crystal of the nitride. Then, zinc sulfide ZnS, selenium zinc, or a single crystal of their mixed crystal, namely sulfide/selenium zinc ZnSSe is formed at a substrate of a compound semiconductor light-emitting element, a zinc sulfide/oxide ZnS1-xOx layer 2 is included between this compound semiconductor substrate and a nitride semiconductor light-emitting layer, and a composition of this inclusion layer is slanted for forming a buffer layer where grating constants on both surfaces are matched. For example, a composition (x) is allowed to change continuously from x=0 to 1 toward a ZnO epitaxial layer 3 from an ZnS substrate 1, thus obtaining a light-emitting element with an improved light-emission efficiency.
申请公布号 JPH04199752(A) 申请公布日期 1992.07.20
申请号 JP19900334709 申请日期 1990.11.29
申请人 SHARP CORP 发明人 KITAGAWA MASAHIKO;TOMOMURA YOSHITAKA;NAKANISHI KENJI
分类号 H01L21/203;H01L33/06;H01L33/12;H01L33/28;H01L33/32;H01L33/40;H01L33/62 主分类号 H01L21/203
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