发明名称 Semiconductor devices
摘要 1,138,958. Transistors. HITACHI Ltd. 29 March, 1966 [29 March, 1965], No. 13913/66. Heading H1K. In a device comprising a unipolar transistor in a sealed casing, at least the terminal wires from the casing are made of copper material to reduce any thermoelectric force developed in the connections between the terminal wires and external circuits. Fig. 1 shows a germanium or silicon body 2 with electrodes 3 of gold, silver or aluminium and lead wires 4 connecting the electrodes to terminal wires which are made of copper, silver, gold, zinc or aluminium to reduce thermoelectric force when connected to external copper circuits. The casing 7 may be filled with silicone oil to reduce temperature gradient and the base 1 may consist of beryllium oxide. Fig. 4 shows an alternative arrangement in which the transistor casing is embedded in plastics material 13 and the terminal wires 5 are wound round a bar 14 of heat conducting material. The arrangement produces inductance compensation and the wires 5 may be in two portions, only the lower portion (52) being of copper material. In addition, further temperature equalization may be achieved by embeddng the plastics body 13 in a further body of heat conducting material such as Wood's metal. The intermediate lead wires may be composed of an iron-nickel alloy. Circuits for a D.C.-A.C. converter and for a scanner switch for sampling data storage utilizing such transistors are also described.
申请公布号 GB1138958(A) 申请公布日期 1969.01.01
申请号 GB19660013913 申请日期 1966.03.29
申请人 HITACHI LTD. 发明人
分类号 H01L23/055;H01L23/22;H01L23/31;H01L23/42;H01L23/66;H02M7/537;H03K17/693 主分类号 H01L23/055
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