| 摘要 |
PURPOSE:To prevent current leakage even if part of an contact opening is diverted from a diffusion layer by a method wherein a poly-Si layer is provided on either P type or N type diffusion layer where a contacting opening exists. CONSTITUTION:A contact opening 9 is made within the N<+> diffusion region 4 of a P well. Next a phosphorus doped poly-Si layer 10 is formed only on the opening 9. Then the surface of the Si 10 is oxidized and, simultaneously, phosphorus is diffused on an N type Si substrate 1 through the opening 9 to form a diffusion area 4'. For this reason, a complete P-N junction is accomplished even if part of the opening 9 is diverted from the region 4, preventing the leakage of current. This is followed by formation of contact holes 11, 13 on the poly-Si layer 10 and P<+> diffusion layer 5. Thence, ions of boron are injected into the whole surface to form a diffusion region 5'. By so doing, a complete P-N junction is accomplished even if part of the hole 13 is diverted from the region 15, preventing leakage. Then an Al electrode wiring 14 is formed. |
