| 摘要 |
PURPOSE:To obtain fine patterns of high quality by using the resist prepd. by adding a polymer of diallyl ester of dicarboxylic acid to a three-element copolymer of methacrylate ester, methacrylic acids and chloride of methacrylate ester. CONSTITUTION:A soln. of a mixture of a three-element copolymer A of 2-20mol% methacrylic acid, 0.4-3mol% chloride of methacrylic ester, and the balance methacrylic ester, and a two-element copolymer of methacrylic ester and methacrylic acid, or the composition prepd. by adding a polymer of diallyl ester of dicarboxylic acid (polydiallyl orthophthalate etc.) to the copolymer A alone at 1-35wt% of the total amount of both is coated on an oxide film 2 of SiO2 on an Si wafer 1, after which it is prebaked at 60-100 deg.C in an N2 atmosphere, where crosslinking is caused. Exposing this followed by developing yields the resist film 3a of which the ratio between the thickness H1 of the resist film 3 before developing and the thickness H2 after the developing, H2/H1, is near 1 despite low-temp. prebaking, that is, the sufficiently crosslinked film. Hence, the wafer 1 is not damaged by thermal impact. |
